- patented trench schottky technology - excellent high temperature stability - low forward voltage - low power loss/ high efficiency - high forward surge capability packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test v rrm v dv/dt 10000 v/s typ. max. typ. max. typ. max. typ. max. i f = 10a 0.56 - 0.60 - 0.71 - 0.75 - i f = 20a 0.66 0.72 0.74 0.84 0.79 0.89 0.83 0.93 i f = 10a 0.48 - 0.53 - 0.59 - 0.62 - i f = 20a 0.59 0.65 0.63 0.71 0.67 0.77 0.70 0.80 t j = 25c - 500 - 500 - 150 - 150 a t j = 125c 15 45 15 45 3 15 3 15 ma r jc c/w t j c t stg c document number: ds_d1411064 version: b14 3 120 150 note 1: pulse test with pulse width=300s, 1% duty cycle instantaneous reverse current per diode at rated reverse voltage i r typical thermal resistance per diode - 55 to +150 - 55 to +150 i fsm operating junction temperature range storage temperature range a v t j = 125c v f voltage rate of change (rated v r ) instantaneous forward voltage per diode ( note1 ) t j = 25c v f 250 a per diode mounting torque: 0.56 nm max. molding compound meets ul 94 v-0 flammability rating ito-220ab tsf40h 200c 200 20 40 tsf40h 120c tsf40h 150c peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode maximum repetitive peak reverse voltage maximum average forward rectified current per device i f(av) mechanical data case: ito-220ab 100 polarity: as marked weight: 1.7 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter symbol unit tsf40h 100c tsf40h100c thru tsf40h200c taiwan semiconductor trench schottky rectifier features - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec - halogen-free according to iec 61249-2-21 definition typical applications trench schottky barrier rectifier are designed for high frequency miniature switched mode power supplies such as adapters, lighting and on-board dc/dc converters.
25c 100c 125c 150c fig 3: vf for 120v 25c 100c 125c 150c fig 3: vf for 150v document number: ds_d1411064 version: b14 c0 packing code part no. tsf40hxxxc (note 1) c0 packing code part no. TSF40H120C note 1: "xxx" defines voltage from 100v (tsf40h100c) to 200v (tsf40h200c) tsf40h100c thru tsf40h200c taiwan semiconductor ordering information packing g 50 / tube packing code suffix package ito-220ab ratings and characteristics curves (t a =25c unless otherwise noted) example TSF40H120C c0g g green compound description preferred part no. packing code suffix 0 10 20 30 40 50 0 25 50 75 100 125 150 average forward current (a) case temperature ( o c) fig.1 - forward current derating curve with heatsink 3in x 5in x 0.25in al - plate tsf40h150c~200c tsf40h100c~120c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 2 - typical forward characteristics t j =25 c t j =100 c t j =125 c t j =150 c tsf40h100c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 3 - typical forward characteristics TSF40H120C t j =25 c t j =100 c t j =125 c t j =150 c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 4 - typical forward characteristics tsf40h150c t j =25 c t j =100 c t j =125 c t j =150 c
document number: ds_d1411064 version: b14 tsf40h100c thru tsf40h200c taiwan semiconductor 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 7 - typical reverse characteristics tsf40h100c t j =25 c t j =100 c t j =125 c t j =150 c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 7 - typical reverse characteristics TSF40H120C t j =25 c t j =100 c t j =125 c t j =150 c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 8 - typical reverse characteristics tsf40h150c t j =25 c t j =100 c t j =125 c t j =150 c 10 100 1000 10000 0.1 1 10 100 junction capacitance (pf) a reverse voltage (v) fig. 10 - typical junction capacitance f=1.0mhz vsig=50mvp - p TSF40H120C tsf40h100c tsf40h150c tsf40h200c 0.0001 0.001 0.01 0.1 1 10 100 10 20 30 40 50 60 70 80 90 100 instantaneous reverse current (ma) percent of rated peak reverse voltage (%) fig. 9 - typical reverse characteristics tsf40h200c t j =25 c t j =100 c t j =125 c t j =150 c 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 instantaneous forward current (a) forward voltage (v) fig. 6 - typical forward characteristics tsf40h200c t j =25 c t j =100 c t j =125 c t j =150 c
dim. min max min max a 4.30 4.70 0.17 0.19 b 2.50 3.16 0.10 0.12 c 2.30 2.96 0.09 0.12 d 0.46 0.76 0.02 0.03 e 6.30 6.90 0.25 0.27 f 9.60 10.30 0.38 0.41 g 3.00 3.40 0.12 0.13 h 0.95 1.45 0.04 0.06 i 0.50 0.90 0.02 0.04 j 2.40 3.20 0.09 0.13 k 14.80 15.50 0.58 0.61 l - 4.10 - 0.16 m 12.60 13.80 0.50 0.54 n - 1.80 - 0.07 o 2.41 2.67 0.09 0.11 p/n = specific device code g = green compound yww = date code f = factory code document number: ds_d1411064 version: b14 marking diagram tsf40h100c thru tsf40h200c taiwan semiconductor package outline dimensions ito-220ab unit (mm) unit (inch)
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